Lasing Emission of InGaAs Quantum Dot Microdisk Diodes

Polarization of lasing emission in microdisk laser diodes

TE polarization of optical emission from microdisk laser diodes of radius R55 mm, thickness L50.3 mm, is found to dominate both below and above room-temperature lasing threshold current, I th 52 mA. TE emission in the lasing mode at l51560 nm wavelength is due to higher optical gain for TE modes in the quantum well device. In our device geometry, the intrinsic whispering gallery resonances have...

InGaAs/GaP quantum dot light-emitting diodes on Si

High-temperature lasing in diode microdisk lasers with InAs/InGaAs quantum dots

We demonstrate that quantum dot microdisk lasers are able to operate under continuous wave current injection at 100 o C. We also present a novel method for increasing a side mode suppression ratio in microdisk lasers.

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the...

Quantum Dot Gate InGaAs FETs

This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTeZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface states at the channel-gate insulator boundary while providing sufficient barrier height to confine the carriers in the channel created by inversion. In additio...